Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb

Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 4, 2012, Pages

  Ouardi, Siham ^a   Fecher, Gerhard H ^a   Felser, Claudia ^a   Schwall, Michael ^b   Naghavi, S Shahab ^b   Gloskovskii, Andrei ^b   Balke, Benjamin ^b   Hamrle, Jaroslav ^c   Postava, Kamil ^c   Piatora, Jaromír ^c   Ueda, Shigenori ^d   Kobayashi, Keisuke ^d  

^a MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

^c VSB TECHNICAL UNIVERSITY OF OSTRAVA   (Czech Republic)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84864579582     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.86.045116     Document Type: Article

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