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Volumn 53, Issue 2, 2008, Pages 157-161

Mechanism of acceptor impurity initiation in the TiCoSb intermetallic semiconductor heavily doped with a V donor impurity. 1. Studies of the crystal structure and the distribution of the electron density of states

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EID: 49449088003     PISSN: 20710186     EISSN: 20710194     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.