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Volumn 53, Issue 2, 2008, Pages 157-161
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Mechanism of acceptor impurity initiation in the TiCoSb intermetallic semiconductor heavily doped with a V donor impurity. 1. Studies of the crystal structure and the distribution of the electron density of states
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 49449088003
PISSN: 20710186
EISSN: 20710194
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (2)
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References (17)
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