Electronic transport properties of electron- and hole-doped semiconducting C 1b Heusler compounds: NiTi1-x MxSn (M=Sc, v )

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 8, 2010, Pages

  Ouardi, Siham ^a   Fecher, Gerhard H ^a   Balke, Benjamin ^a   Kozina, Xenia ^a   Stryganyuk, Gregory ^a   Felser, Claudia ^a   Lowitzer, Stephan ^b   Ködderitzsch, Diemo ^b   Ebert, Hubert ^b   Ikenaga, Eiji ^c  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b UNIVERSITY OF MUNICH   (Germany)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957558591     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.085108     Document Type: Article

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