Effects of Ge doping on the thermoelectric properties of TiCoSb-based p-type half-Heusler compounds

Journal of Alloys and Compounds

Volumn 467, Issue 1-2, 2009, Pages 590-594

  Wu, Ting ^a,b   Jiang, Wan ^a   Li, Xiaoya ^a   Bai, Shengqiang ^a   Liufu, Shengcong ^a   Chen, Lidong ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Electrical transport; Half Heusler compound; Thermal conductivity

Indexed keywords

CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; GERMANIUM; PLASMA ARC MELTING; POINT DEFECTS; SEEBECK COEFFICIENT; SINTERING; SPARK PLASMA SINTERING; THERMAL INSULATING MATERIALS; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMOELECTRIC EQUIPMENT;

DEFECTS INDUCED; ELECTRICAL CONDUCTIVITIES; ELECTRICAL TRANSPORT; FIGURE OF MERITS; GE CONTENTS; HALF-HEUSLER COMPOUND; HEUSLER COMPOUNDS; LATTICE THERMAL CONDUCTIVITIES; ROOM TEMPERATURES; SPARK PLASMAS; STRAIN FIELDS; THERMOELECTRIC PROPERTIES;

THERMAL CONDUCTIVITY;

EID: 56949093587     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.12.055     Document Type: Article

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