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Volumn 97, Issue 25, 2010, Pages

Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi0.3-x Scx Zr0.35 Hf0.35 Sn

(11) Ouardi, Siham a Fecher, Gerhard H a Balke, Benjamin a Schwall, Michael a Kozina, Xeniya a Stryganyuk, Gregory a Felser, Claudia a Ikenaga, Eiji b Yamashita, Yoshiyuki c Ueda, Shigenori c Kobayashi, Keisuke c

a JOHANNES GUTENBERG UNIVERSITY (Germany)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; FERMI ENERGY; HARD X RAY; HEUSLER ALLOYS; HEUSLER COMPOUND; IN-GAP STATE; N-TYPE CONDUCTIVITY; P-TYPE; P-TYPE BEHAVIORS; PARENT COMPOUNDS; PURE COMPOUNDS; THERMOELECTRIC COMPOUND; THERMOELECTRIC PROPERTIES;

DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM; SCANDIUM; SEEBECK COEFFICIENT; THERMOELECTRIC EQUIPMENT; TIN; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

THERMAL CONDUCTIVITY;

EID: 78650752663 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3531662 Document Type: Article

Times cited : (22)

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