Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers

Advanced Materials

Volumn 24, Issue 30, 2012, Pages 4163-4169

  Kusuma, Damar Yoga ^a   Lee, Pooi See ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

memory device; monolayer film; organic ferroelectric; resistive switching; VDF oligomer

Indexed keywords

BIASING VOLTAGES; BISTABLES; C-V MEASUREMENT; COERCIVE FIELD; CONDUCTANCE BISTABILITY; CONDUCTANCE SWITCHING; FERROELECTRIC TUNNEL JUNCTIONS; MEMORY ELEMENT; MEMORY RETENTION; MONOLAYER FILM; RESISTIVE SWITCHING; SWITCHING VOLTAGES; VINYLIDENE FLUORIDE;

DATA STORAGE EQUIPMENT; FERROELECTRICITY; MAGNETIC FILMS; MONOLAYERS; OLIGOMERS;

TUNNEL JUNCTIONS;

POLYVINYL DERIVATIVE; POLYVINYLIDENE FLUORIDE;

ARTICLE; CHEMISTRY; ELECTRIC CAPACITANCE; ELECTRICAL EQUIPMENT; ELECTROCHEMISTRY;

ELECTRIC CAPACITANCE; ELECTRICAL EQUIPMENT AND SUPPLIES; ELECTROCHEMISTRY; POLYVINYLS;

EID: 84864579264     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201104476     Document Type: Article

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