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Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

The preparation and ferroelectric properties of defect-free ultrathin films of vinylidene fluoride oligomer

(7) Xu, Haisheng a Li, Guobing a Zhang, Yanni a Zhang, Xiuli a,b Gu, Yingjun a Shen, Dong a Meng, Xiangjian c

a EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b SHANGHAI UNIVERSITY OF ENGINEERING SCIENCE (China)

c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; COERCIVE FIELD; CRYSTAL GRAINS; DEFECT-FREE; FATIGUE PROPERTIES; FERROELECTRIC PHASE; FERROELECTRIC PROPERTY; HIGH QUALITY; MEMORY STACK; NON-VOLATILE RANDOM ACCESS MEMORIES; OPERATING VOLTAGE; P COPOLYMERS; PULSE POLARIZATION; REMNANT POLARIZATIONS; ROOM TEMPERATURE; SATURATED POLARIZATION; SUBSTRATE TEMPERATURE; ULTRA-THIN; VINYLIDENE FLUORIDE;

DEFECTS; DEGRADATION; FERROELECTRIC DEVICES; FERROELECTRICITY; FILM PREPARATION; POLARIZATION; RANDOM ACCESS STORAGE; ULTRATHIN FILMS;

FERROELECTRIC FILMS;

EID: 76949097383 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3298463 Document Type: Article

Times cited : (15)

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