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Applied Physics A: Materials Science and Processing

Volumn 108, Issue 1, 2012, Pages 177-183

Reversible resistance switching properties in Ti-doped polycrystalline Ta 2O 5 thin films

(7) He, Xiliang a,b Li, Xiaomin a Gao, Xiangdong a Yu, Weidong a Yang, Rui a,b Liu, Xinjun a Cao, Xun a,b

a SHANGHAI INSTITUTE OF CERAMICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CONDUCTIVE FILAMENTS; CONSTANT STRESS; DEVICE STRUCTURES; HIGH-RESISTANCE STATE; LOW RESISTANCE; LOW-RESISTANCE STATE; POLYCRYSTALLINE TA; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECT; RETENTION PROPERTIES; TI ADDITION;

PLATINUM; SWITCHING; TANTALUM OXIDES; THIN FILMS;

OXYGEN VACANCIES;

EID: 84864551165 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-6868-8 Document Type: Article

Times cited : (6)

References (16)

1
- 46749093701
- J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

2
- 0036923301
- W.W. Zhuang, W. Pan, B.D. Ulrich, J.J. Lee, L. Stecker, A. Burmaster, D.R. Evans, S.T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S.Q. Liu, N.J. Wu, A. Ignatiev, in Tech. Dig. Int. Electron Devices Meet. (2002), p. 193
- (2002) Tech. Dig. Int. Electron Devices Meet. , pp. 193
- Zhuang, W.W.¹ Pan, W.² Ulrich, B.D.³ Lee, J.J.⁴ Stecker, L.⁵ Burmaster, A.⁶ Evans, D.R.⁷ Hsu, S.T.⁸ Tajiri, M.⁹ Shimaoka, A.¹⁰ Inoue, K.¹¹ Naka, T.¹² Awaya, N.¹³ Sakiyama, K.¹⁴ Wang, Y.¹⁵ Liu, S.Q.¹⁶ Wu, N.J.¹⁷ Ignatiev, A.¹⁸

3
- 54949089222
- S.-E. Ahn, M.-J. Lee, Y. Park, B.S. Kang, C.B. Lee, K.H. Kim, S. Seo, D.-S. Suh, D.-C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I.-K. Yoo, J.-H. Lee, J.-B. Park, I.-G. Baek, B.H. Park, Adv. Mater. 20, 924 (2008
- (2008) Adv. Mater. , vol.20 , pp. 924
- Ahn, S.-E.¹ Lee, M.-J.² Park, Y.³ Kang, B.S.⁴ Lee, C.B.⁵ Kim, K.H.⁶ Seo, S.⁷ Suh, D.-S.⁸ Kim, D.-C.⁹ Hur, J.¹⁰ Xianyu, W.¹¹ Stefanovich, G.¹² Yin, H.¹³ Yoo, I.-K.¹⁴ Lee, J.-H.¹⁵ Park, J.-B.¹⁶ Baek, I.-G.¹⁷ Park, B.H.¹⁸

4
- 33947326575
- K. Tsunoda, Y. Fukuzumi, J.R. Jameson, Z. Wang, P.B. Griffin, Y. Nishi, Appl. Phys. Lett. 90, 113501 (2007
- (2007) Appl. Phys. Lett. , vol.90 , pp. 113501
- Tsunoda, K.¹ Fukuzumi, Y.² Jameson, J.R.³ Wang, Z.⁴ Griffin, P.B.⁵ Nishi, Y.⁶

5
- 34147108217
- Y.B. Nian, J. Strozier, N.J. Wu, X. Chen, A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007
- (2007) Phys. Rev. Lett. , vol.98 , pp. 146403
- Nian, Y.B.¹ Strozier, J.² Wu, N.J.³ Chen, X.⁴ Ignatiev, A.⁵

6
- 0037514404
- T. Sakamoto, H. Sunamura, H. Kawaura, T. Hasegawa, T. Nakayama, M. Aono, Appl. Phys. Lett. 82, 3032 (2003
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3032
- Sakamoto, T.¹ Sunamura, H.² Kawaura, H.³ Hasegawa, T.⁴ Nakayama, T.⁵ Aono, M.⁶

7
- 51349165739
- A. Ranman, M.K. Sanyal, Nanotechnology 19, 395203 (2008
- (2008) Nanotechnology , vol.19 , pp. 395203
- Ranman, A.¹ Sanyal, M.K.²

8
- 36549006435
- C. Yoshida, K. Tsunoda, H. Noshiro, Y. Sugiyama, Appl. Phys. Lett. 91, 223510 (2007
- (2007) Appl. Phys. Lett. , vol.91 , pp. 223510
- Yoshida, C.¹ Tsunoda, K.² Noshiro, H.³ Sugiyama, Y.⁴

9
- 33745767057
- B.J. Choi, S. Choi, K.M. Kim, Y.C. Shin, C.S. Hwang, Appl. Phys. Lett. 89, 012906 (2006
- (2006) Appl. Phys. Lett. , vol.89 , pp. 012906
- Choi, B.J.¹ Choi, S.² Kim, K.M.³ Shin, Y.C.⁴ Hwang, C.S.⁵

10
- 34047137158
- T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, Y. Tokura, Phys. Rev. B 75, 165101 (2007
- (2007) Phys. Rev. B , vol.75 , pp. 165101
- Fujii, T.¹ Kawasaki, M.² Sawa, A.³ Kawazoe, Y.⁴ Akoh, H.⁵ Tokura, Y.⁶

11
- 33751538233
- D.S. Kim, Y.H. Kim, C.E. Lee, Y.T. Kim, Phys. Rev. B 74, 174430 (2006
- (2006) Phys. Rev. B , vol.74 , pp. 174430
- Kim, D.S.¹ Kim, Y.H.² Lee, C.E.³ Kim, Y.T.⁴

12
- 33846118818
- W.S. Lau, K.K. Khaw, T. Han, N.P. Sandler, Appl. Phys. Lett. 89, 262901 (2006
- (2006) Appl. Phys. Lett. , vol.89 , pp. 262901
- Lau, W.S.¹ Khaw, K.K.² Han, T.³ Sandler, N.P.⁴

13
- 43049125511
- M.T. Seman, J.J. Robbins, D. Leonhardt, S. Agarwal, C.A. Wolden, J. Electrochem. Soc. 155, 168 (2008
- (2008) J. Electrochem. Soc. , vol.155 , pp. 168
- Seman, M.T.¹ Robbins, J.J.² Leonhardt, D.³ Agarwal, S.⁴ Wolden, C.A.⁵

14
- 78650349637
- J.J. Yang, M.-X. Zhang, J.P. Strachan, F. Miao, M.D. Pickett, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams, Appl. Phys. Lett. 97, 232102 (2010
- (2010) Appl. Phys. Lett. , vol.97 , pp. 232102
- Yang, J.J.¹ Zhang, M.-X.² Strachan, J.P.³ Miao, F.⁴ Pickett, M.D.⁵ Kelley, R.D.⁶ Medeiros-Ribeiro, G.⁷ Williams, R.S.⁸

15
- 83455179487
- F. Miao, J.P. Strachan, J.J. Yang, M.-X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D. Kelley, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 23, 5633 (2011
- (2011) Adv. Mater. , vol.23 , pp. 5633
- Miao, F.¹ Strachan, J.P.² Yang, J.J.³ Zhang, M.-X.⁴ Goldfarb, I.⁵ Torrezan, A.C.⁶ Eschbach, P.⁷ Kelley, R.D.⁸ Medeiros-Ribeiro, G.⁹ Williams, R.S.¹⁰

16
- 79960642086
- M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.-J. Kim, D.H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, K. Kim, Nat. Mater. 10, 625 (2011
- (2011) Nat. Mater. , vol.10 , pp. 625
- Lee, M.-J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Chang, M.⁵ Hur, J.H.⁶ Kim, Y.-B.⁷ Kim, C.-J.⁸ Seo, D.H.⁹ Seo, S.¹⁰ Chung, U.-I.¹¹ Yoo, I.-K.¹² Kim, K.¹³

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