High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2010, Pages 140-143

  Ha, Wonill ^a   Griffith, Zach ^a   Kim, Dae Hyun ^a   Chen, Peter ^a   Urteaga, Miguel ^a   Brar, Bobby ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

D mode transistor; E mode transistor; Feedback amplifier; InP high electron mobility transistor; Metamorphic low loss dielectric layer; Mutiple interconnect layer

Indexed keywords

D-MODE TRANSISTOR; E-MODE TRANSISTOR; INP; INTERCONNECT LAYERS; LOW LOSS;

BROADBAND AMPLIFIERS; DESIGN; ELECTRON MOBILITY; ENERGY GAP; FEEDBACK AMPLIFIERS; GALLIUM ALLOYS; INDIUM; INDIUM PHOSPHIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955936608     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2010.5516006     Document Type: Conference Paper

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