Surface and internal reactions of ZnO nanowires: Etching and bulk defect passivation by H atoms

Journal of Physical Chemistry C

Volumn 116, Issue 30, 2012, Pages 16093-16097

  Kim, Wooseok ^a   Kwak, Geunjae ^a   Jung, Minbok ^b   Jo, Sam K ^b   Miller, James B ^c   Gellman, Andrew J ^c   Yong, Kijung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gachon University   (South Korea)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; BULK DEFECTS; ENHANCED EMISSION; MECHANISTIC MODELS; MICROSCOPIC IMAGE; ZNO NANOWIRES; ZNO NWS;

ETCHING; HYDROGEN; MASS SPECTROMETRY; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SURFACE REACTIONS; TEMPERATURE PROGRAMMED DESORPTION; ZINC; ZINC OXIDE;

ATOMS;

EID: 84864451387     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp304191m     Document Type: Review

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