Substrate-induced stress in silicon nanocrystal/SiO 2 multilayer structures

Chinese Physics B

Volumn 21, Issue 7, 2012, Pages

  Tao, Ye Liao ^a   Zuo, Yu Hua ^a   Zheng, Jun ^a   Xue, Chun Lai ^a   Cheng, Bu Wen ^a   Wang, Qi Ming ^a   Xu, Jun ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

Raman spectrum; silicon nanocrystal; sputtering; stress

Indexed keywords

HIGH GROWTH TEMPERATURES; HIGH VACUUM; MULTILAYER STRUCTURES; OPTICAL AND ELECTRONIC PROPERTIES; PHONON MODE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RAMAN FREQUENCIES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SI NANOCRYSTAL; SILICON NANOCRYSTALS; THERMAL EXPANSION COEFFICIENTS;

AMORPHOUS SILICON; ELECTRONIC PROPERTIES; NANOCRYSTALS; QUARTZ; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SAPPHIRE; SILICON; SILICON OXIDES; SPUTTERING; STRESSES;

SUBSTRATES;

EID: 84864251275     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/21/7/077402     Document Type: Article

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