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Volumn 116, Issue 29, 2012, Pages 15281-15289

Band gap engineering of oxide photoelectrodes: Characterization of ZnO 1-xSe x

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BAND ALIGNMENTS; BAND GAP ENGINEERING; CONDUCTION BAND EDGE; ELECTRICAL MEASUREMENT; ELECTROCHEMICAL JUNCTIONS; FLAT BAND; HYDROGEN EVOLUTION; INCIDENT PHOTON-TO-CURRENT EFFICIENCIES; MATERIALS SYSTEMS; NARROW BANDS; PHOTO-ELECTROCHEMICAL DEVICE; PHOTO-ELECTROCHEMICAL METHOD; PHOTO-ELECTRODES; PHOTOCURRENT MEASUREMENT; PHOTOELECTROCHEMICALS; SILICON VALENCE BAND; SOFT X-RAY EMISSIONS; SOLAR WATER SPLITTING; TANDEM DEVICES; VACUUM LEVEL; WATER SPLITTING; WELL-ALIGNED; ZNO;

EID: 84864242916     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp304481c     Document Type: Article
Times cited : (20)

References (49)
  • 1
    • 4043112177 scopus 로고    scopus 로고
    • Turner, J. A. Science 2004, 305, 972-974
    • (2004) Science , vol.305 , pp. 972-974
    • Turner, J.A.1
  • 32


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.