III-V nitride epilayers for photoelectrochemical water splitting: GaPN and GaAsPN

Journal of Physical Chemistry B

Volumn 110, Issue 50, 2006, Pages 25297-25307

  Deutsch, Todd G ^a   Koval, Carl A ^b   Turner, John A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; ELECTROCHEMICAL CORROSION; PHOTOCHEMICAL REACTIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

BAND EDGE ENERGIES; NITRIDE EPILAYERS; NITROGEN COMPOSITIONS; PHOTOELECTRODES;

SINGLE CRYSTALS;

EID: 33846672136     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0652805     Document Type: Article

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