SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

  Hung, Shao Tsu ^a   Chang, Chi Jung ^a   Chen, Chin Ching ^b   Lo, Chien Fong ^b   Ren, Fan ^b   Pearton, Stephen J ^b   Kravchenko, Ivan I ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b University of Florida   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; GRAIN GROWTH; OXYGEN; OXYGEN SENSORS; SENSORS;

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; GAS SENSING PROPERTIES; GATE ELECTRODES; HYDROTHERMALLY; LOW-POWER CONSUMPTION; OPERATION TEMPERATURE; SENSING MECHANISM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864194006     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4736974     Document Type: Article

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