Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching

Nano Letters

Volumn 12, Issue 7, 2012, Pages 3437-3442

  James, Teena ^a   Kalinin, Yevgeniy V ^a   Chan, Chih Chieh ^a   Randhawa, Jatinder S ^a   Gaevski, Mikhail ^c   Gracias, David H ^a,b  

^a Johns Hopkins University   (United States)

^b JOHNS HOPKINS UNIVERSITY   (United States)

^c Princeton University   (United States)

Author keywords

anofluidics; embranes; eparations; lectrochemistry; on channels; onic circuits

Indexed keywords

ANOFLUIDICS; EMBRANES; EPARATIONS; LECTROCHEMISTRY; ON CHANNELS;

ELECTRIC RECTIFIERS; GOLD; IONIC CONDUCTION; PLASMA ETCHING; SEMICONDUCTING SILICON; SILICON;

NANOPORES;

GOLD; METAL NANOPARTICLE; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; ELECTRIC CONDUCTIVITY; NANOPORE; PARTICLE SIZE; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; GOLD; MEMBRANES, ARTIFICIAL; METAL NANOPARTICLES; NANOPORES; PARTICLE SIZE; SEMICONDUCTORS; SILICON;

EID: 84863818295     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300673r     Document Type: Article

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