Gating of nanopores: Modeling and implementation of logic gates

Journal of Physical Chemistry C

Volumn 114, Issue 49, 2010, Pages 21287-21290

  Mafe, Salvador ^a   Manzanares, José A ^a   Ramirez, Patricio ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL POTENTIAL DISTRIBUTION; ELECTRICAL SIGNAL; ELECTROLYTE SOLUTIONS; GATE POTENTIALS; INPUT AND OUTPUTS; INSULATING LAYERS; METALLIC LAYERS; METALLIC SURFACE; NANO-FLUIDIC STRUCTURES; NANO-POROUS; POISSON-BOLTZMANN EQUATIONS; PORE SOLUTION; PORE SURFACE;

BOLTZMANN EQUATION; ELECTROLYTES; INSULATING MATERIALS; LOGIC GATES; POISSON DISTRIBUTION; POISSON EQUATION;

NANOPORES;

EID: 78650280059     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1087114     Document Type: Article

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