Electrical properties and reliability of ZnO-based nanorod current emitters

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 7, 2012, Pages 1143-1150

  Yao, I Chuan ^a   Lin, Pang ^a   Huang, Sheng He ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Field emission properties; Ga doped ZnO nanorod emitters; oxygen plasma treatment

Indexed keywords

AXIS ORIENTATION; CRYSTALLINE STRUCTURE; ENERGY DISPERSIVE X-RAY SPECTROMETERS; ETCHING TIME; FIELD EMISSION MEASUREMENTS; FIELD EMISSION PROPERTY; FIELD ENHANCEMENT FACTOR; GA-DOPED ZNO; GALLIUM DOPING; HIGH POTENTIAL; HIGH TEMPERATURE; LIGHT EMITTING DEVICES; MOLAR RATIO; OXYGEN PLASMA TREATMENTS; PHOTOLUMINESCENCE SPECTRUM; STABLE OPERATION; TIP ANGLE; TIP STRUCTURE; TURN-ON FIELD; ZNO NANOROD;

CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; FIELD EMISSION; FLAT PANEL DISPLAYS; GALLIUM; MORPHOLOGY; OXYGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

NANORODS;

EID: 84863763746     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2012.2194494     Document Type: Article

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