Excellent resistive switching memory: Influence of GeO x in WO x mixture

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2012, Pages

  Rahaman, S Z ^a   Maikap, S ^a   Chen, W S ^b   Tien, T C ^b   Lee, H Y ^b   Chen, F T ^b   Kao, M J ^b   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; LOW CURRENTS; PROGRAM/ERASE; RESISTANCE RATIO; RESISTIVE SWITCHING MEMORIES; ROBUST DATUM;

EID: 84863714583     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2012.6210124     Document Type: Conference Paper

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