A self-doping, O 2-stable, n-type interfacial layer for organic electronics

Advanced Energy Materials

Volumn 2, Issue 4, 2012, Pages 455-460

  Reilly III, Thomas H ^a,b   Hains, Alexander W ^a   Chen, Hsiang Yu ^a   Gregg, Brian A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Poudre River Technology and Development   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM CARBONATES; DESHIELDING; DOPED FILMS; DRY AIR; FILM MORPHOLOGY; FILM ROUGHNESS; HYDRATED FILMS; INTERFACIAL LAYER; N-TYPE DOPING; ORDERS OF MAGNITUDE; ORGANIC ELECTRONICS; ORGANIC PHOTOVOLTAIC CELLS; PERYLENEDIIMIDES; PERYLENES; SELF-DOPING; SOLID FILMS; STATE OF THE ART;

CESIUM; CHARGE TRANSFER; DEHYDRATION; HYDRATION; IONS; PHOTOVOLTAIC CELLS; POLYCYCLIC AROMATIC HYDROCARBONS; WORK FUNCTION;

SEMICONDUCTOR DOPING;

EID: 84863660376     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201100446     Document Type: Article

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