Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Lee, Sangkyu ^a   Kim, Jeonghyun ^a   Choi, Junghyun ^a   Park, Hyunjung ^a   Ha, Jaehwan ^a   Kim, Yongkwan ^b   Rogers, John A ^b   Paik, Ungyu ^a  

^a Hanyang University   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; CRITICAL DIMENSION; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; JET PRINTING; LIQUID FLOW; LIQUID PRECURSORS; ON/OFF CURRENT RATIO; OPTIMIZED CONDITIONS; OXIDE SEMICONDUCTOR; PRINTED TRANSISTORS; PRINTING METHOD; RESIDUAL CHARGE; TARGET-SUBSTRATE; TRANSPARENT THIN FILM TRANSISTOR; UNINTENTIONAL DOPING;

ELECTRIC FIELDS; ELECTROHYDRODYNAMICS; LIQUIDS; PRINTING; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS;

TRANSISTORS;

EID: 84863361611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691177     Document Type: Article

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