Deposition of carbon nanotubes on CMOS

IEEE Transactions on Nanotechnology

Volumn 11, Issue 2, 2012, Pages 215-219

  Wang, Xiaozhi ^a   Zhang, Yan ^b   Haque, M Samiul ^b   Teo, Ken B K ^c   Mann, Mark ^b   Unalan, Husnu Emrah ^b   Warburton, Paul A ^d   Udrea, Florin ^b   Milne, William I ^b  

^a Department of Electrical Engineering and Computer Science   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c AIXTRON Nanoinstruments Ltd   (United Kingdom)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

CMOSFETs; nanotechnology; temperature control

Indexed keywords

CMOS TRANSISTORS; CMOSFETS; GAS SPECIES; GROWTH PROCESS; HOT FILAMENT; IN-SITU; LOW SUBSTRATE TEMPERATURE; OUTPUT CURRENT; P-TYPE; PASSIVATION LAYER; SOURCE GAS;

CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; SUBSTRATES; TEMPERATURE CONTROL;

TRANSISTORS;

EID: 84863338470     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2038787     Document Type: Article

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