Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 239-244

  Fujii, Hiromasa ^a   Wang, Yunpeng ^b   Watanabe, Kentaroh ^b   Sugiyama, Masakazu ^a   Nakano, Yoshiaki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Gallium compounds; B3. Solar cells

Indexed keywords

ABSORPTION EDGES; CANDIDATE MATERIALS; CRYSTAL QUALITIES; GAAS; GRADED INTERLAYER; HETERO-INTERFACES; HIGH INDIUM CONTENTS; IN-SITU MONITORING; INDIUM CONTENT; LARGE LATTICE MISMATCH; LATTICE RELAXATION; LOW BANDGAP; STRAIN-COMPENSATED; SURFACE REFLECTANCE; ULTRA-THIN;

COMPOSITE FILMS; CRYSTAL GROWTH; ENERGY GAP; GALLIUM ARSENIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; TRANSMISSION ELECTRON MICROSCOPY; WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863332327     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.036     Document Type: Conference Paper

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