Molecular beam epitaxy of strain-compensated InGaAs/GaAsP quantum-well intersubband photodetectors

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 977-982

  Bacher, K ^a   Massie, S ^a   Seaford, M ^a  

^a Quantum Epitaxial Designs Inc   (United States)

Author keywords

GaAs; GaAsP; InGaAs; MBE; QWIP; Strain compensation

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; PHOSPHORUS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

LATTICE RELAXATION; STRAIN COMPENSATION;

PHOTODETECTORS;

EID: 0031147593     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01007-X     Document Type: Article

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