Antireflective ZnSnO/Ag bilayer-based transparent source and drain electrodes for transparent thin film transistors

Applied Physics Letters

Volumn 100, Issue 26, 2012, Pages

  Choi, Kwang Hyuk ^a   Koo, Hyun Woo ^b   Kim, Tae Woong ^b   Kim, Han Ki ^a  

^a Kyung Hee University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION EFFECTS; ANTIREFLECTIVE; BI-LAYER; CHANNEL LAYERS; DIRECT CONTACT; MULTILAYER STRUCTURES; SATURATION MOBILITY; THIN-FILM TRANSISTOR (TFTS); TRANSPARENT SOURCE; TRANSPARENT THIN FILM TRANSISTOR; TRILAYER FILM; TRILAYERS;

ELECTRODES; FILM PREPARATION; MULTILAYER FILMS; OXIDE FILMS; THIN FILM TRANSISTORS; THIN FILMS;

SILVER;

EID: 84863328506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4732091     Document Type: Article

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