76.2: Development of highly stable a-IGZO TFT with TiOx as a passivation layer for active-matrix display

Digest of Technical Papers - SID International Symposium

Volumn 41 1, Issue , 2010, Pages 1132-1135

  Seo, Hyun Sik ^a   Bae, Jong Uk ^a   Kim, Dae Won ^a   Ryoo, Chang Il ^a   Kang, Im Kuk ^a   Min, Soon Young ^a   Kim, Yong Yub ^a   Han, Joon Soo ^a   Kim, Chang Dong ^a   Hwang, Yong Kee ^a   Chung, In Jae ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; PASSIVATION; THIN FILM TRANSISTORS; TITANIUM OXIDES; ZINC OXIDE;

ACTIVE MATRIX DISPLAYS; BACK CHANNELS; ETCHING PROCESS; HIGHLY STABLES; INDIUM GALLIUM ZINC OXIDES; OXYGEN PLASMAS; PASSIVATION LAYER; STOPPER LAYERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 84863327675     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3499856     Document Type: Conference Paper

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