SCOPUS 정보 검색 플랫폼

Journal of Nanoscience and Nanotechnology

Volumn 12, Issue 4, 2012, Pages 3567-3570

Fabrication of p-type silicon nanowire arrays with a high aspect ratio using electrochemical and alkaline etching

(3) Jang, Hwan Soo a Choi, Ho Jin a Kim, Jae Hyun a

a Daegu Gyeongbuk Institute of Science and Technology (South Korea)

Author keywords

Electrochemical etching; KOH etching; Nanowire; P type silicon

Indexed keywords

ALKALINE ETCHING; ETCHING TIME; HIGH ASPECT RATIO; KOH ETCHING; P-TYPE SILICON; SILICON MORPHOLOGY; SILICON NANOSTRUCTURES; SILICON WIRES; SOLUTION CONCENTRATION; VERTICAL ALIGNMENT;

ASPECT RATIO; NANOWIRES; PERIODIC STRUCTURES; POROUS SILICON; WIRE;

ELECTROCHEMICAL ETCHING;

EID: 84863299960 PISSN: 15334880 EISSN: 15334899 Source Type: Journal
DOI: 10.1166/jnn.2012.5591 Document Type: Conference Paper

Times cited : (5)

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