W-Band CMOS amplifiers achieving +10 dBm saturated output power and 7.5 dB NF

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 12, 2009, Pages 3403-3409

  Sandström, Dan ^a   Varonen, Mikko ^a   Kärkkäinen, Mikko ^a   Halonen, Kari A I ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

CMOS millimeter wave integrated circuits; MMIC amplifiers; Slow wave transmission lines; W band

Indexed keywords

100 GHZ; CHIP SIZES; CMOS AMPLIFIERS; CMOS MILLIMETER WAVE INTEGRATED CIRCUITS; CMOS TECHNOLOGY; CONVENTIONAL COPLANAR WAVEGUIDES; CURRENT CONSUMPTION; HIGH FREQUENCY; LOW-PARASITIC; MEASURED RESULTS; MMIC AMPLIFIERS; OUTPUT POWER; SATURATED OUTPUT POWER; SLOW WAVE; SUBSTRATE LOSS; TRANSMISSION LINE;

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; COPLANAR WAVEGUIDES; ELECTRIC LINES; INTEGRATED CIRCUITS; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TRANSMISSION LINE THEORY; WAVE PROPAGATION;

WAVE TRANSMISSION;

EID: 72949113065     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2009.2032274     Document Type: Conference Paper

References (17)

1. S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S. P. Voinigescu, "A 1.2 V, 140 GHz receiver with on-die antenna in 65 nm CMOS," in Proc. IEEE RFIC Symp., 2008, pp. 229-232.
2. E. Laskin, M. Khanpour, R. Aroca, K. W. Tang, P. Garcia, and S. P. Voinigescu, "A 95 GHz receiver with fundamental-frequency VCO and static frequency divider in 65 nm digital CMOS," in IEEE ISSCC Dig. Tech. Papers, 2008, pp. 180-605.
3. Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, and H. Wang, "A 86 to 108 GHz amplifier in 90 nm CMOS," IEEE Trans. Microw. Wireless Compon. Lett., vol.18, no.2, pp. 124-126, Feb. 2008.
4. S. T. Nicolson and S. P. Voinigescu, "Methodology for simultaneous noise and impedance matching in W-band LNAs," in Proc. IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), 2006, pp. 279-282.
5. B. Heydari, M. Bohsali, E. Adabi, and A. Niknejad, "Low-power mm-wave components up to 104 GHz in 90 nm CMOS," in IEEE ISSCC Dig. Tech. Papers, 2007, pp. 200-597.
6. C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, "Millimeter-wave CMOS device modeling and simulation," in Proc. IEEE Int. Symp. Circuits Syst. (ISCAS 2004), Vancouver, Canada, May 2004, pp. 524-527.
7. T. S. D. Cheung and J. R. Long, "Shielded passive devices for siliconbased monolithic microwave and millimeter-wave integrated circuits," IEEE J. Solid-State Circuits, vol.41, no.5, pp. 1183-1200, May 2006.
8. M. Varonen, M. Kärkkäinen, M. Kantanen, and K. Halonen, "Millimeter-wave integrated circuits in 65-nm CMOS," IEEE J. Solid-State Circuits, vol.43, no.9, pp. 1991-2002, Sep. 2008.
9. M. Kärkkäinen, M. Varonen, D. Sandström, T. Tikka, S. Lindfors, and K. A. I. Halonen, "Design aspects of 65-nm CMOS MMICs," in Proc. European Microwave Integrated Circuit Conf. (EuMIC), 2008, pp. 115-118.
10. W. Eisenstadt and Y. Eo, "S-parameter-based IC interconnect transmission line characterization," IEEE Trans. Compon., Hybrids, Manufact. Technol., vol.15, no.4, pp. 483-490, Aug. 1992.
11. C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits, vol.40, no.1, pp. 144-155, Jan. 2005.
12. A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren, and D. Ritter, "A 25 GHz 3.3 dB NF lownoise amplifier based upon slowwave transmission lines and the 0.18 μm CMOS technology," in Proc. IEEE RFIC Symp., 2008, pp. 373-376.
13. S. M. Sze, High-Speed Semiconductor Devices. New York: Wiley, 1990.
14. Y. H. Wu, A. Chin, C. S. Liang, and C. C. Wu, "The performance limiting factors as RF MOSFETs scale down," in Proc. IEEE RFIC Symp. 2000, Boston, MA, Jun. 2000, pp. 151-155.
15. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's," IEEE Trans. Electron Devices, vol.26, no.7, pp. 1032-1037, Jul. 1979.
16. T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M.-T. Yang, P. Schvan, and S. P. Voinigescu, "Algorithmic design of CMOS LNAs and PAs for 60-GHz radio," IEEE J. Solid-State Circuits, vol.42, no.5, pp. 1044-1057, May 2007.
17. T. Vähä-Heikkilä, M. Lahdes, M. Kantanen, T. Karttaavi, and J. Tuovinen, "Very wideband automated on-wafer noise figure and gain measurements at 50-110 GHz," in Proc. European Gallium Arsenide and Related III-V Compounds Applications Symp., 2002, pp. 233-236.