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Volumn 4, Issue 6, 2012, Pages 3261-3269

Novel chemical route to prepare a new polymer blend gate dielectric for flexible low-voltage organic thin-film transistor

Author keywords

block copolymer; flexible electronics; organic thin film transistor; pentacene; polymer gate dielectrics, polystyrene

Indexed keywords

ATOMIC FORCE MICROSCOPE (AFM); BENDING MODES; BLEND FILMS; BLEND THIN FILMS; CHANNEL LAYERS; CHEMICAL ROUTES; CRACK FREE; CURRENT RATIOS; DEVICE APPLICATION; FLEXIBLE DEVICE; GATE DIELECTRIC LAYERS; HIGH MOLECULAR WEIGHT; HYDROPHILIC AND HYDROPHOBIC; HYDROPHOBIC SURFACES; INSULATING PROPERTIES; LOW-LEAKAGE CURRENT; LOW-TEMPERATURE FABRICATION; LOW-VOLTAGE; MECHANICAL FLEXIBILITY; METAL INSULATOR METALS; MOISTURE ABSORPTION; MOLECULAR ASSEMBLY; ORGANIC ADDITIVES; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PINHOLE DEFECTS; PLURONICS; POLYMER GATE DIELECTRICS; PRECURSOR SOLUTIONS; SATURATION MOBILITY; SOLUTION DEPOSITION; STRINGENT REQUIREMENT; SURFACE FREE; SURFACE FREE ENERGY;

EID: 84863184814     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3006143     Document Type: Article
Times cited : (19)

References (37)
  • 15
    • 0027592123 scopus 로고
    • Reiter, G. Langmuir 1993, 9, 1344-1351
    • (1993) Langmuir , vol.9 , pp. 1344-1351
    • Reiter, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.