Field emission and strain engineering of electronic properties in boron nitride nanotubes

Nanotechnology

Volumn 23, Issue 10, 2012, Pages

  Ghassemi, Hessam M ^a   Lee, Chee Hui ^b   Yap, Yoke Khin ^b   Yassar, Reza S ^a  

^a Michigan Technological University   (United States)

^b MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BN NANOTUBE; BORON NITRIDE NANOTUBES; ELECTROMECHANICAL MEASUREMENTS; FIELD EMISSION PROPERTY; FIRST CYCLE; IN-SITU; MECHANICAL STRAINING; REALTIME IMAGING; STRAIN ENGINEERING; STRUCTURAL DEGRADATION; TRANSMISSION ELECTRON MICROSCOPE;

CARBON NANOTUBES; ELECTRONIC PROPERTIES; EXPERIMENTS; FIELD EMISSION; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC PROPERTIES;

EID: 84863181151     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/10/105702     Document Type: Article

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