High-performance low-voltage organic field-effect transistors prepared on electro-polished aluminum wires

ACS Applied Materials and Interfaces

Volumn 4, Issue 1, 2012, Pages 6-10

  Nam, Sooji ^a,b   Jang, Jaeyoung ^a,b   Park, Jong Jin ^a   Kim, Sang Won ^a   Park, Chan Eon ^a,b   Kim, Jong Min ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

bending stability; e textiles; hysteresis free; low voltage; metallic fiber; organic field effect transistors

Indexed keywords

BENDING-STABILITY; E-TEXTILES; HYSTERESIS-FREE; LOW-VOLTAGE; METALLIC FIBERS;

ALUMINUM; DIELECTRIC MATERIALS; GATE DIELECTRICS; HYDROPHOBICITY; HYSTERESIS; SURFACE CHEMISTRY; SURFACE ROUGHNESS; TENSILE STRAIN; WIRE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84863011951     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2011405     Document Type: Article

References (21)

1. Forrest, S. R. Nature 2004, 428, 911
2. Sekitani, T.; Zschieschang, U.; Klauk, H.; Someya, T. Nat. Mater. 2010, 9, 1015
3. Street, R. A.; Wong, W. S.; Ready, S. E.; Chabinyc, M. L.; Arias, A. C.; Limb, S.; Salleo, A.; Lujan, R. Mater. Today 2006, 9, 32
4. Zschieschang, U.; Yamamoto, T.; Takimiya, K.; Kuwabara, H.; Ikeda, M.; Sekitani, T.; Someya, T.; Klauk, H. Adv. Mater. 2011, 23, 654
5. Hamedi, M.; Forchheimer, R.; Inganäs, O. Nat. Mater. 2007, 6, 357
6. Hamedi, M.; Herlogsson, L.; Crispin, X.; Marcilla, R.; Berggren, M.; Inganäs, O. Adv. Mater. 2009, 21, 573
7. Maccioni, M.; Orgiu, E.; Cosseddu, P.; Locci, S.; Bonfiglio, A. Appl. Phys. Lett. 2006, 89, 143515
8. Lee, J. B.; Subramanian, V. IEEE Trans. Electron Devices 2005, 52, 269
9. Granstrom, J.; Katz, H. J. Mater. Res. 2004, 19, 3540
10. Lee, J. B.; Subramanian, V. IEEE Int. Electron Devices Meet. 2003, 8.3.1-8.3.4
11. Liu, J.; Namboothiry, M. A. G.; Carroll, D. L. Appl. Phys. Lett. 2007, 90, 063501
12. Veres, J.; Ogier, S.; Lloyd, G. Chem. Mater. 2004, 16, 4543
13. Lee, J.; Kaake, L. G.; Cho, J. H.; Zhu, X.-Y.; Lodge, T. P.; Frisbie, C. D. J. Phys. Chem. C 2009, 113, 8972
14. Kalb, W. L.; Mathis, T.; Haas, S.; Stassen, A. F.; Batlogg, B. Appl. Phys. Lett. 2007, 90, 092104
15. Jo, P. S.; Sung, J.; Park, C.; Kim, E.; Ryu, D. Y.; Pyo, S.; Kim, H.-C.; Hong, J. M. Adv. Func. Mater. 2008, 18, 1202
16. Zhao, Y.-P.; Wang, G.-C.; Lu, T.-M. Phys. Rev. B 1999, 60, 9157
17. Yang, C.; Shin, K.; Yang, S. Y.; Jeon, H.; Choi, D.; Chung, D. S.; Park, C. E. Appl. Phys. Lett. 2006, 89, 153508
18. Jang, J.; Nam, S.; Yun, W. M.; Yang, C.; Hwang, J.; An, T. K.; Chung, D. S.; Park, C. E. J. Mater. Chem. 2011, 21, 12542
19. Majewski, L. A.; Schroeder, R.; Grell, M. Adv. Mater. 2005, 17, 192
20. Lee, H. S.; Kim, D. H.; Cho, J. H.; Hwang, M.; Jang, Y. S.; Cho, K. J. Am. Chem. Soc. 2008, 130, 10556
21. McDowell, M.; Hill, I. G.; McDermott, J. E.; Bernasek, S. L.; Schwartz, J. Appl. Phys. Lett. 2006, 88, 073505