Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Jousseaume, V ^a   Fantini, A ^a   Nodin, J F ^a   Guedj, C ^a   Persico, A ^a   Buckley, J ^a   Tirano, S ^b   Lorenzi, P ^a   Vignon, R ^a   Feldis, H ^a   Minoret, S ^a   Grampeix, H ^a   Roule, A ^a   Favier, S ^a   Martinez, E ^a   Calka, P ^a   Rochat, N ^a   Auvert, G ^a   Barnes, J P ^a   Gonon, P ^c   Vallee C ^c   Perniola, L ^a   De Salvo, B ^a   more..

^a CEA LETI   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; COMPARATIVE STUDIES; COMPOSITION ANALYSIS; DATA RETENTION; ELECTRICAL CHARACTERISTIC; HIGH RESISTANCE; HIGH-RESISTANCE STATE; INTEGRATION SCHEME; LOW-RESISTANCE STATE; MATERIAL SCREENING; NON-POLAR; PT ELECTRODE; RESET VOLTAGE; RESISTANCE STATE; RESISTIVE MEMORIES; SWITCHING CHARACTERISTICS; TEST SETUPS; TUNABILITIES;

PLATINUM;

HAFNIUM COMPOUNDS;

EID: 77957900865     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488316     Document Type: Conference Paper

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