Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 207-208

  Efthymiou, E ^a   Bernardini, S ^a   Zhang, J F ^b   Volkos, S N ^a,c   Hamilton, B ^a   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^c CNR   (Italy)

Author keywords

Deuterium; Dielectric breakdown; Hydrogen; RF remote plasma; SiO2 HfO2 gate stacks

Indexed keywords

DEGRADATION; DEUTERIUM; HAFNIUM COMPOUNDS; HYDROGEN; LOGIC GATES; MOSFET DEVICES; PLASMA APPLICATIONS; RELIABILITY; SILICON COMPOUNDS; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE; DEUTERIUM PLASMAS; DIELECTRIC BREAKDOWN; DIELECTRIC RELIABILITIES; ELECTRICAL STRESSES; GATE STACKS; INDUCED DEFECTS; RELIABILITY DEGRADATIONS; REMOTE PLASMA TREATMENTS; REMOTE RF; RF REMOTE PLASMA; SIO2/HFO2 GATE STACKS;

PLASMAS;

EID: 54849409665     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.051     Document Type: Article

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