Observation of the semiconductor-metal transition behavior in monolayer graphene

Carbon

Volumn 50, Issue 6, 2012, Pages 2273-2279

  Liu, Y P ^a   Lew, W S ^a   Goolaup, S ^a   Shen, Z X ^a   Sun, L ^a   Zhou, T J ^b   Wong, S K ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-TERMINAL RESISTANCE; LANDAU LEVELS; MAGNETO-TRANSPORT MEASUREMENT; METAL PROPERTIES; METAL SEMICONDUCTOR METAL; PERPENDICULAR MAGNETIC FIELDS; RESISTANCE BEHAVIORS; SEMICONDUCTOR-METAL TRANSITION; TEMPERATURE DEPENDENT; TEMPERATURE REGIONS; TEMPERATURE RISE; THERMALLY ACTIVATED; TRANSITION BEHAVIOR; TRANSITION PROPERTIES;

GRAPHENE; MAGNETIC FIELDS; MONOLAYERS;

METALS;

EID: 84862816663     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.01.046     Document Type: Article

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