First-principles study of magnetic properties in V-doped GaN

Chemical Physics Letters

Volumn 529, Issue , 2012, Pages 35-38

  Yao, Guangrui ^a   Fan, Guanghan ^a   Xing, Haiying ^b   Zheng, Shuwen ^a   Ma, Jiahong ^a   Li, Shuti ^a   Zhang, Yong ^a   He, Miao ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b TIANJIN POLYTECHNIC UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE MAGNETIC SEMICONDUCTORS; DOUBLE EXCHANGE MECHANISM; ELECTRONIC AND MAGNETIC PROPERTIES; FERROMAGNETIC GROUND STATE; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES STUDY; ROOM TEMPERATURE; SPIN-POLARIZED; SUPER CELL;

GALLIUM NITRIDE; MAGNETIC MOMENTS; MAGNETIC PROPERTIES;

DOPING (ADDITIVES);

EID: 84862811619     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2012.01.043     Document Type: Article

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