Ferromagnetic ordering of carbon doped GaN semiconductor: First-principles prediction

Solid State Sciences

Volumn 13, Issue 2, 2011, Pages 480-483

  Zhang, Chang Wen ^a   Wang, Pei Ji ^a   Li, Ping ^a  

^a UNIVERSITY OF JINAN   (China)

Author keywords

Electronic structure; First principles calculation

Indexed keywords

C-DOPED; DOUBLE EXCHANGE MECHANISM; FERROMAGNETIC GROUND STATE; FERROMAGNETIC ORDERINGS; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; ROOM TEMPERATURE; RT FERROMAGNETISM; VIA HOLE;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDE; MAGNETIC PROPERTIES;

GALLIUM ALLOYS;

EID: 79251632258     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2010.12.016     Document Type: Article

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