Photocurrent spectroscopy of single wurtzite GaAs nanowires

AIP Conference Proceedings

Volumn 1399, Issue , 2011, Pages 429-430

  Kim, D C ^a   Ahtapodov, L ^a   Boe, A B ^a   Choi, J W ^b   Ji, H ^b   Kim, G T ^b   Moses, A F ^a   Dheeraj, D L ^a   Fimland, B O ^a   Weman, H ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b Korea University   (South Korea)

Author keywords

GaAs; nanowire; Photocurrent; wurtzite

Indexed keywords

EID: 84862790116     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3666437     Document Type: Conference Paper

References (11)

1. D. L. Dheeraj et al., Nano Lett. 8, 4459 (2008).
2. L. Titova et al., Appl. Phys. Lett. 89, 173126 (2006).
3. M. Murayama and T. Nakayama, Phys. Rev. B 49, 4710 (1994).
4. T. B. Hoang et al., Appl. Phys. Lett. 94, 133105 (2009).
5. A. De and C. E. Pryor, Phys. Rev. B 81, 155210 (2010).
6. A. Maharjan et al., Appl. Phys. Lett. 94, 193115 (2009).
7. A. Cavallini et al., Nano Lett. 7, 2166 (2007).
8. R. Calarco et al., Nano Lett. 5, 981 (2005).
9. J. S. Blackmore, J. Appl. Phys. 53, R123 (1982).
10. M. J. Howes and D. V. Morgan, Gallium arsenide, John Wiley & Sons, 1985, pp.195-203.
11. K. J. Ebeling, Integrated Opto-electronics, Springer- Verlag, 1992, pp.472-475.