Thermal quench effects on ferroelectric domain walls

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 21, 2012, Pages

  Paruch, P ^a   Kolton, A B ^b   Hong, X ^c,d   Ahn, C H ^c   Giamarchi, T ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b Centro Atómico Bariloche ^*  (Argentina)

^c YALE UNIVERSITY   (United States)

^d UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84862659861     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.214115     Document Type: Article

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47. The significant asymmetry in domain switching and stability as a function of the polarity of the tip bias is a feature already noted in previous studies and can be related to the particular device geometry used. Essentially, the metallic electrodes on either side of the ferroelectric thin films can be considered as two back-to-back Schottky diodes, with the barrier height determined by the work functions of the respective electrode materials. In addition, further asymmetry in current-voltage and switching characteristics can result from strain and other boundary-specific conditions and, in thin films, the direction of polarization. Finally, the device architecture itself is strongly asymmetric: One electrode is planar, while the other is the nanoscale AFM tip, with a nominal radius at apex form metal-coated tips given as 25-50 nm. In such devices, the nucleation and growth of domains is, therefore, strongly dependent on the polarity of the voltage applied to the AFM tip.
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