Enhanced thermoelectric properties of n-type Mg 2.16(Si 0.4Sn 0.6) 1-ySb y due to nano-sized Sn-rich precipitates and an optimized electron concentration

Journal of Materials Chemistry

Volumn 22, Issue 27, 2012, Pages 13653-13661

  Liu, Wei ^a   Tang, Xinfeng ^a   Li, Han ^a   Yin, Kang ^a   Sharp, Jeff ^b   Zhou, Xiaoyuan ^c   Uher, Ctirad ^c  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b Marlow Industries Inc   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY SCATTERING; DENSITY-OF-STATES; EFFECTIVE MASS; ELECTRON CONCENTRATION; ELECTRONIC HEAT CAPACITY; EPMA ANALYSIS; FIGURE OF MERITS; INTERMEDIATE TEMPERATURES; LATTICE THERMAL CONDUCTIVITY; LIGHT CONDUCTION; LOW COSTS; LOW TEMPERATURES; N-TYPE DOPANTS; NANO-PHASE; NANO-SIZED; POWER FACTORS; ROOM TEMPERATURE; SB DOPING; SB-DOPED; SPARK PLASMA SINTERING PROCESS; TEM ANALYSIS; THERMOELECTRIC PROPERTIES; XRD;

CONDUCTION BANDS; CRYSTAL LATTICES; ELECTRIC POWER FACTOR; ELECTRON TRANSPORT PROPERTIES; MICROSTRUCTURE; OPTIMIZATION; SILICON; SOLID SOLUTIONS; SOLID STATE REACTIONS; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY;

TIN;

EID: 84862576000     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c2jm31919e     Document Type: Article

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