Optimized thermoelectric properties of Sb-doped Mg2(1+ z)Si 0.5- ySn0.5Sby through adjustment of the Mg content

Chemistry of Materials

Volumn 23, Issue 23, 2011, Pages 5256-5263

  Liu, Wei ^a   Tang, Xinfeng ^a   Li, Han ^a   Sharp, Jeff ^b   Zhou, Xiaoyuan ^c   Uher, Ctirad ^c  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b Marlow Industries Inc   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

adjustment of the Mg content; Mg2(1+z)Si0.5 ySn0.5Sby; point defects; thermoelectric properties

Indexed keywords

DIMENSIONLESS FIGURE OF MERIT; DOMINANT POINTS; DOPING EFFECTS; ELECTRON CONCENTRATION; ENVIRONMENTALLY-FRIENDLY; INTERMEDIATE TEMPERATURES; MG CONTENT; OVER-STOICHIOMETRIC; POSITIVE EFFECTS; POWER FACTORS; PRECISE CONTROL; SB-DOPED; SOLID STATE REACTION METHOD; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; VARIABLE CONTENT;

ELECTRIC POWER FACTOR; OPTIMIZATION; POINT DEFECTS; SILICON; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN;

ANTIMONY COMPOUNDS;

EID: 82955239929     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm202445d     Document Type: Article

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