Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Shin, Ik Soo ^a   Kim, Jung Min ^b   Jeun, Jun Ho ^b   Yoo, Seok Hyun ^b   Ge, Ziyi ^c   Hong, Jong In ^a   Ho Bang, Jin ^d   Kim, Yong Sang ^b,c  

^a Seoul National University   (South Korea)

^b Myong Ji University   (South Korea)

^c NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CAPACITANCE VOLTAGE; CDSE; CDSE QDS; CDSE QUANTUM DOTS; FLOATING-GATES; HETERO-JUCTION; NON-VOLATILE; NON-VOLATILE MEMORIES; ORGANIC MEMORY DEVICES; PENTACENES; RETENTION TIME; TRAPPED CHARGE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84862567704     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4711209     Document Type: Article

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