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Volumn 100, Issue 18, 2012, Pages

Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire

(10) Xie, Yong a,b Madel, Manfred b Zoberbier, Thilo b Reiser, Anton b Jie, Wanqi a Neuschl, Benjamin b Biskupek, Johannes b Kaiser, Ute b Feneberg, Martin b,c Thonke, Klaus b

a NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

b UNIVERSITY OF ULM (Germany)

c OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; C AXIS ORIENTED; C-AXIS ORIENTATIONS; CHEMICAL VAPOR; EPITAXIAL RELATIONSHIPS; HETEROEPITAXIAL; HIGH-CRYSTALLINE QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; MODIFIED CHEMICAL VAPOR DEPOSITIONS; NANOPILLARS; POLYCRYSTALLINE GROWTH; SAPPHIRE SUBSTRATES; ZNO; ZNO EPITAXIAL FILMS;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; EPITAXIAL FILMS; SAPPHIRE; VAPORS; X RAY DIFFRACTION; ZINC OXIDE;

EPITAXIAL GROWTH;

EID: 84862560609 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4709430 Document Type: Article

Times cited : (22)

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