Controlling silicon nanowire growth direction via surface chemistry

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2865-2870

  Shin, Naechul ^a   Filler, Michael A ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

hydrogen; in situ; kinking; nanowire; Silicon; surface chemistry

Indexed keywords

COVALENTLY BONDED; GROWTH ORIENTATIONS; IN-SITU; KINKING; NANOSCALE SEMICONDUCTORS; NANOWIRE GROWTH; REAL-TIME INFRARED SPECTROSCOPY; ROOT CAUSE; SEMICONDUCTOR NANOWIRE; SI NANOWIRE; SILICON NANOWIRES; VAPOR-LIQUID-SOLID;

ELECTRON MICROSCOPY; HYDROGEN; INFRARED SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILICON; SURFACE CHEMISTRY; VAPORS;

NANOWIRES;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 84862274664     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300461a     Document Type: Article

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