Facile molecular approach to transparent thin-film field-effect transistors with high-performance using new homo- and heteroleptic indium(III)-tin(II) single-source precursors

Chemistry of Materials

Volumn 24, Issue 11, 2012, Pages 2078-2090

  Samedov, Kerim ^a   Aksu, Yilmaz ^a   Driess, Matthias ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

alkoxides; metal oxides; molecular precursors; nanocomposites; semiconductors

Indexed keywords

ALKOXIDES; ANALYTICAL TECHNIQUES; ATOMIC SCALE; BIMETALLIC ALKOXIDES; CURRENT RATIOS; DRY AIR; ENERGY DISPERSIVE X-RAY; EXCELLENT PERFORMANCE; FACILE SYNTHESIS; FIELD-EFFECT MOBILITIES; HETEROLEPTIC; HOMOGENEOUS DISTRIBUTION; ICP-OES; INDIUM OXIDE; INDIUM TIN OXIDE; INDIUM TIN OXIDE THIN FILMS; INDUCTIVELY COUPLED PLASMA-OPTICAL EMISSION SPECTROMETRY; LOW TEMPERATURE SYNTHESIS; METAL OXIDES; MOLECULAR APPROACH; MOLECULAR PRECURSOR; POWDER X RAY DIFFRACTION; RESULTING MATERIALS; SINGLE-SOURCE PRECURSOR; SPECTROSCOPIC PROPERTY; STRUCTURAL CHARACTERIZATION; SYNTHETIC AIR; THIN FILM FIELD EFFECT TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY TEM;

CALCINATION; CHLORINE COMPOUNDS; CRYSTALLINE MATERIALS; DEGRADATION; FIELD EFFECT TRANSISTORS; FILM PREPARATION; INDIUM; INDIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; NANOCOMPOSITES; OPTICAL EMISSION SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON WAFERS; THIN FILMS; TIN OXIDES; TOLUENE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

TIN;

EID: 84862215158     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm300510y     Document Type: Article

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