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Volumn , Issue , 2011, Pages 001983-001986
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Nanoscale measurements of the surface photovoltage in Cu(In, Ga)Se 2, Cu 2ZnSnS 4, and Cu 2ZnSnSe 4 thin films: The role of the surface electronics on the efficiency of solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
CU(IN , GA)SE;
FIRST PRINCIPLE CALCULATIONS;
HOMOJUNCTION;
INVERSION REGIONS;
KESTERITES;
NANO-SCALE MEASUREMENTS;
SPACE CHARGE REGIONS;
SURFACE PHOTOVOLTAGES;
TYPE INVERSION;
ELECTRONIC STRUCTURE;
GALLIUM;
NANOTECHNOLOGY;
PHOTOVOLTAIC EFFECTS;
SCANNING TUNNELING MICROSCOPY;
STOICHIOMETRY;
SURFACE PROPERTIES;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 84861074866
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2011.6186342 Document Type: Conference Paper |
Times cited : (6)
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References (16)
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