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Volumn 66, Issue 16, 2002, Pages 1652141-1652145

Effect of Van Hove singularities on the photovoltage spectra of semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; NITROGEN; PHOSPHORUS;

EID: 0037110009     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.165214     Document Type: Article
Times cited : (7)

References (38)
  • 14
    • 84936483864 scopus 로고
    • The possibility of higher energy bands influence on bellow-band-gap photovoltage spectra through absorption was also mentioned but has not been shown experimentally [L. Kronik, Y. Shapira, J. Vac. Sci. Technol. A 11, 3081 (1993)].
    • (1993) J. Vac. Sci. Technol. A , vol.11 , pp. 3081
    • Kronik, L.1    Shapira, Y.2
  • 16
    • 33646618684 scopus 로고    scopus 로고
    • note
    • This is not necessarily true for some extreme circumstances, e.g., accumulated surfaces, or highly resistive samples. See Ref. 8, p. 90.
  • 18
    • 33646619085 scopus 로고    scopus 로고
    • note
    • This effect, however, requires a more intense excitation and is considered negligible at the low excitation levels considered here.
  • 20
    • 36149008808 scopus 로고
    • The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
    • (1963) Phys. Rev. , vol.129 , pp. 1550
    • Phillip, H.R.1    Ehrenreich, H.2
  • 21
    • 0016125708 scopus 로고
    • The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
    • (1974) Phys. Status Solidi B , vol.66 , pp. 161
    • Bloom, S.1    Harbeke, G.2    Meier, E.3    Ortenburger, I.B.4
  • 22
    • 33847596250 scopus 로고
    • The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
    • (1983) Phys. Rev. B , vol.27 , pp. 985
    • Aspnes, D.E.1    Studna, A.A.2
  • 23
    • 33847596250 scopus 로고
    • Of the three semiconductors studied, only GaP shows a sharp increase of a above the fundamental gap, related to the first direct transition [D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
    • (1983) Phys. Rev. B , vol.27 , pp. 985
    • Aspnes, D.E.1    Studna, A.A.2
  • 26
    • 33646621049 scopus 로고    scopus 로고
    • note
    • Lifetimes associated with a saddle point Van Hove singularity should be those of a lower energy feature, to which carriers thermalize immediately following the photoexcitation. Thus, saddle points may only be detected if they are clearly manifested in the absorption spectra.
  • 29
    • 33646633827 scopus 로고    scopus 로고
    • note
    • Surface preparation affects gap states at the surface, which are of minor relevance, if at all, to this measurement.
  • 34
    • 26744464488 scopus 로고
    • D. E. Aspnes, Surf. Sci. 37, 418 (1973); F. H. Pollak, Surf. Interface Anal. 31, 938 (2001).
    • (1973) Surf. Sci. , vol.37 , pp. 418
    • Aspnes, D.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.