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84936483864
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The possibility of higher energy bands influence on bellow-band-gap photovoltage spectra through absorption was also mentioned but has not been shown experimentally [L. Kronik, Y. Shapira, J. Vac. Sci. Technol. A 11, 3081 (1993)].
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Kronik, L.1
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Physical Properties of Semiconductors
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33646618684
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note
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This is not necessarily true for some extreme circumstances, e.g., accumulated surfaces, or highly resistive samples. See Ref. 8, p. 90.
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18
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33646619085
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note
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This effect, however, requires a more intense excitation and is considered negligible at the low excitation levels considered here.
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20
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36149008808
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The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
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Phillip, H.R.1
Ehrenreich, H.2
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21
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0016125708
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The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
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Bloom, S.1
Harbeke, G.2
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Ortenburger, I.B.4
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22
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33847596250
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The changes in the light penetration, 1 - R, over the relevant ranges are 5.9%, 8.3%, and 7.2% for GaAs, GaN, and GaP, respectively, and are mostly featureless [H. R. Phillip and H. Ehrenreich, Phys. Rev. 129, 1550 (1963); S. Bloom, G. Harbeke, E. Meier, and I. B. Ortenburger, Phys. Status Solidi B 66, 161 (1974);D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
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Studna, A.A.2
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23
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33847596250
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Of the three semiconductors studied, only GaP shows a sharp increase of a above the fundamental gap, related to the first direct transition [D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983)].
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26
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33646621049
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note
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Lifetimes associated with a saddle point Van Hove singularity should be those of a lower energy feature, to which carriers thermalize immediately following the photoexcitation. Thus, saddle points may only be detected if they are clearly manifested in the absorption spectra.
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27
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0001257733
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I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, and J. Salzman, Phys. Rev. B 59, 9748 (1999).
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I. Shalish, L. Kronik, G. Segal, Y. Shapira, S. Zamir, B. Meylar, and J. Salzman, Phys. Rev. B 61, 15 573 (2000).
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29
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33646633827
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note
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Surface preparation affects gap states at the surface, which are of minor relevance, if at all, to this measurement.
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33
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0004147486
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M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, 2nd Ed. (Springer, New York, 1988), p. 109.
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26744464488
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D. E. Aspnes, Surf. Sci. 37, 418 (1973); F. H. Pollak, Surf. Interface Anal. 31, 938 (2001).
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A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, Phys. Rev. B 48, 11 810 (1993).
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