P-type transparent conducting SnO 2:Zn film derived from thermal diffusion of Zn/SnO 2/Zn multilayer thin films

Surface and Coatings Technology

Volumn 206, Issue 21, 2012, Pages 4356-4361

  Ni, Jiamiao ^a,b,c   Zhao, Xiujian ^a   Zhao, Jiang ^a  

^a Wuhan University of Technology   (China)

^b HUBEI UNIVERSITY OF EDUCATION   (China)

^c WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

P type; SnO 2:Zn film; Sputtering; Thermal diffusion; Transparent conducting film; Zn SnO 2 Zn film

Indexed keywords

ANNEALING PARAMETERS; ANNEALING TEMPERATURES; DEPOSITED FILMS; DIRECT CURRENT; LOW RESISTIVITY; MULTI-LAYER THIN FILM; OPTICAL PERFORMANCE; P-TYPE; POLYCRYSTALLINE; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY MAGNETRON SPUTTERING; TETRAGONAL RUTILE STRUCTURE; TRANSPARENT CONDUCTING FILMS; VISIBLE LIGHT; XRD;

ANNEALING; CONDUCTIVE FILMS; DC POWER TRANSMISSION; MAGNETRON SPUTTERING; QUARTZ; SPUTTERING; SUBSTRATES; THERMAL DIFFUSION;

ZINC;

EID: 84861915753     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2012.04.031     Document Type: Article

References (24)

1. Ginley D.S., Bright C. MRS Bull. 2000, 25:15.
2. Minami T. MRS Bull. 2000, 25:38.
3. Young D.L., Moutinho H., Yan Y., Coutts T.J. J. Appl. Phys. 2003, 92:310.
4. McDowell M.G., Sanderson R.J., Hill I.G. Appl. Phys. Lett. 2008, 92:013502.
5. Thangaraju B. Thin Solid Films 2002, 402:71.
6. Jarzebski Z.M., Morton J.P. J. Electrochem. Soc. 1976, 123:299.
7. Samson S., Fonstad C.G. J. Appl. Phys. 1973, 44:4618.
8. Ahmed S.F., Khan S., Ghosh P.K. J. Sol-Gel Sci. Technol. 2006, 39:241.
9. Mehdi M., Mohagheghi B., Saremi M.S. J. Appl. Phys. 2004, 37:1248.
10. Zhao J., Zhao X.J., Ni J.M., Tao H.Z. Acta Mater. 2010, 58:6243.
11. Ni J.M., Zhao X.J., Zheng X.L., Zhao J., Liu B.S. Acta Mater. 2009, 57:278.
12. Ji Z.G., He Z.J., Song Y.L., Liu K., Ye Z.Z. J. Cryst. Growth. 2003, 259:282.
13. He Z.J. Preparation and Studying of P-type Transparent Conductive Antimony Oxide Thin Films. Cnki, paper of master degree, Zhejiang University, China 2004.
14. Ni J.M., Zhao X.J., Zhao J. J. Inorg. Organomet. Polym. 2012, 22:21.
15. Mehdi M., Mohagheghi B., Saremi M.S. Semicond. Sci. Technol. 2004, 19:764.
16. Huang Y.X., Ji Z.G., Chen C. Appl. Surf. Sci. 2007, 253:4819.
17. Hayashi I., Panish M.B., Foy P.W., Sumski S. Appl. Phys. Lett. 1970, 17:109.
18. Zhao J., Ni J.M., Zhao X.J., Xiong Y.L. J. Wuhan Univ. Technol., Mater. Sci. Ed. 2011, 26:388.
19. Cullity B.D. Elements of X-Ray Diffraction 1978, Addison-Wesley, Reading, MA. 2nd.
20. Liu H.S., Chin T.S., Chiu S.Y., Chung K.H., Chang C.S., Liu M.J. Ceram. Int. 1997, 23:19.
21. Kuo C.W., Shen Y.H., Wen S.B., Lee H.E., Hung I.M., Huang H.H. Ceram. Int. 2011, 37:341.
22. Wang M.C., Chen C.Y., Hsi C.S., Wu N.C. J. Eur. Ceram. Soc. 2003, 23:2307.
23. Maniv M., Zangvil A. J. Appl. Phys. 1978, 49:2787.
24. Fu E.G., Zhuang D.M., Zhang G., Ming Z., Yang W.F., Liu J.J. Microelectronics 2004, 35:383.