Metal-insulator transition induced by non-stoichiometry of surface layer and molecular reactions on single crystal KTaO 3

Surface Science

Volumn 606, Issue 15-16, 2012, Pages 1252-1262

  Kubacki, Jerzy ^a,b   Molak, Andrzej ^b   Rogala, MacIej ^a,c   Rodenbücher, Christian ^a   Szot, Krzysztof ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF SILESIA   (Poland)

^c UNIVERSITY OF LODZ   (Poland)

Author keywords

Local conductivity; Local contact potential difference; Metal insulator transitions; Molecular reaction; Potassium tantalate; X ray photoelectron spectroscopy

Indexed keywords

CHARGE STATE; CHEMICAL COMPOSITIONS; CHEMICAL DECOMPOSITION; CHEMICAL RECONSTRUCTION; CONTACT POTENTIAL DIFFERENCE; ELECTRIC CONDUCTION; HIGH TEMPERATURE; INDUCED LOSS; KELVIN PROBE FORCE MICROSCOPY; MODIFIED SURFACES; MOLECULAR REACTIONS; NANO SCALE; NON-STOICHIOMETRY; NONHOMOGENEITY; OXIDATION PROCESS; OXYGEN NON-STOICHIOMETRY; POTASSIUM TANTALATE; SURFACE LAYERS; SURFACE-MODIFIED; SURFACE-SENSITIVE TECHNIQUE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; ARGON; ARRHENIUS PLOTS; ATOMIC FORCE MICROSCOPY; CARBON DIOXIDE; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ION BEAMS; PHOTOELECTRONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE TOPOGRAPHY; TANTALUM; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE REACTIONS;

EID: 84861892073     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2012.04.005     Document Type: Article

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