Structure and growth mechanism of quasi-aligned GaN layer-built nanotowers

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Xiao, Hong Di ^a   Liu, Jian Qiang ^a   Luan, Cai Na ^a   Ji, Zi Wu ^a   Cui, Ji Shi ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF ALIGNMENTS; GROWTH MECHANISMS; GROWTH STAGES; HIGHLY SENSITIVE; MICROSCOPIC TECHNIQUES; NANOTOWERS; NI CATALYSTS; SILICON (111) SUBSTRATES; STEP-BY-STEP; ULTRA-THIN;

CATALYSTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ULTRATHIN FILMS;

GALLIUM NITRIDE;

EID: 84861829423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4717743     Document Type: Article

References (24)

1. Y. B. Tang, Z. H. Chen, H. S. Song, C. S. Lee, H. T. Cong, H. M. Cheng, W. J. Zhang, I. Bello, and S. T. Lee, Nano Lett. 8, 4191 (2008). 10.1021/nl801728d
2. H. M. Kim, Y. H. Cho, H. Lee, S. Kim, S. R. Ryu, D. Y. Kim, T. W. Kang, and K. S. Chung, Nano Lett. 4, 1059 (2004). 10.1021/nl049615a
3. S. D. Hersee, X. Sun, and X. Wang, Nano Lett. 6, 1808 (2006). 10.1021/nl060553t
4. D. Tsivion, M. Schvartzman, R. Popovitz-Biro, P. V. Huth, and E. Joselevich, Science 333, 1003 (2011). 10.1126/science.1208455
5. S. M. Zhou, Y. S. Feng, and L. D. Zhang, Chem. Phys. Lett. 369, 610 (2003). 10.1016/S0009-2614(03)00042-3
6. D. S. Han, J. Park, K. W. Rhie, S. Kim, and J. Chang, Appl. Phys. Lett. 86, 032506 (2005). 10.1063/1.1852725
7. Y. Cui, L. J. Laubon, M. S. Gudiksen, J. F. Wang, and C. M. Lieber, Appl. Phys. Lett. 78, 2214 (2001). 10.1063/1.1363692
8. H. M. Huang, Y. Y. Wu, H. Feick, N. Tran, E. Weber, and P. D. Yang, Adv. Mater. 13, 113 (2001). 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0. CO;2-H
9. J. Y. Li, X. L. Chen, Z. Y. Qiao, Y. G. Cao, and Y. C. Lan, J. Cryst. Growth 213, 408 (2000). 10.1016/S0022-0248(00)00390-0
10. R. S. Wanger and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964). 10.1063/1.1753975
11. P. D. Yang, R. X. Yan, and M. Fardy, Nano Lett. 10, 1529 (2010). 10.1021/nl100665r
12. A. I. Hochbaum and P. D. Yang, Chem. Rev. 110, 527 (2010). 10.1021/cr900075v
13. R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, and H. Lüth, Nano Lett. 7, 2248 (2007). 10.1021/nl0707398
14. S. D. Hersee, X. Sun, and X. Wang, Nano Lett. 6, 1808 (2006). 10.1021/nl060553t
15. A. Taylor, J. Inst. Met. 77, 585 (1950).
16. S. Xue, X. Zhang, R. Huang, D. Tian, H. Zhuang, and C. Xue, Cryst. Growth Des. 8, 2177 (2008). 10.1021/cg800080b
17. H. D. Xiao, R. Liu, H. L. Ma, Z. J. Lin, J. Ma, F. J. Zong, and L. M. Mei, Vacuum 83, 1393 (2009). 10.1016/j.vacuum.2009.04.052
18. Q. Li and G. T. Wang, Appl. Phys. Lett. 93, 043119 (2008). 10.1063/1.2965798
19. J. H. Park, R. Navamathavan, Y. B. Ra, Y. H. Ra, J. D. Kim, and C. R. Lee, J. Cryst. Growth 319, 31 (2011). 10.1016/j.jcrysgro.2011.01.070
20. H. X. Liu, Z. Z. Ye, H. X. Zhang, and B. H. Zhao, Mater. Res. Bull. 35, 1837 (2000). 10.1016/S0025-5408(00)00393-7
21. J. J. Carvajal and C. J. Rojo, Cryst. Growth Des. 9, 320 (2009). 10.1021/cg800498y
22. X. Zhou, Z. X. Xie, Z. Y. Jiang, Q. Kuang, S. H. Zhang, T. Xu, R. B. Huang, and L. S. Zheng, Chem. Commun. 44, 5572 (2005). 10.1039/b510287a
23. J. H. Choi, A. Zoulkarneev, S. Kim, C. W. Baik, M. H. Yang, S. S. Park, H. Suh, U. J. Kim, H. B. Son, J. S. Lee, M. Kim, J. M. Kim, and S. Kim, Nature Photon. 5, 763 (2011). 10.1038/nphoton.2011.253
24. Y. H. Liang, J. H. Huang, N. C. Chang, and C. P. Liu, Cryst. Growth Des. 9, 2021 (2009). 10.1021/cg8014018