Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

Journal of Luminescence

Volumn 132, Issue 10, 2012, Pages 2581-2585

  Kim, Min Su ^a   Nam, Giwoong ^a   Kim, Soaram ^a   Kim, Do Yeob ^b   Lee, Dong Yul ^c   Kim, Jin Soo ^d   Kim, Sung O ^b   Kim, Jong Su ^e   Son, Jeong Sik ^f   Leem, Jae Young ^a  

^a Inje University   (South Korea)

^b Clemson University   (United States)

^c SAMSUNG Electronics   (South Korea)

^d Chonbuk National University   (South Korea)

^e Yeungnam University   (South Korea)

^f Kyungwoon University   (South Korea)

Author keywords

Photoluminescence; R plane; Sapphire; Sol gel; Zinc oxide

Indexed keywords

BOUND EXCITON; EMISSION PEAKS; EMPIRICAL EQUATIONS; FIRST-ORDER; FITTING PARAMETERS; FREE EXCITONS; LONGITUDINAL OPTICAL PHONONS; NEAR BAND EDGE EMISSIONS; R-PLANE; RADIATIVE LIFETIME; S-FACTOR; SAPPHIRE SUBSTRATES; SPIN-COATING METHOD; TEMPERATURE DEPENDENT; TRANSVERSE OPTICAL PHONONS; ZINC OXIDE (ZNO); ZNO THIN FILM;

ACTIVATION ENERGY; EXCITONS; OPTICAL FILMS; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; SAPPHIRE; SOL-GEL PROCESS; SOL-GELS; ZINC OXIDE;

METALLIC FILMS;

EID: 84861819313     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.05.010     Document Type: Article

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