Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

Solid State Communications

Volumn 105, Issue 8, 1998, Pages 497-501

  Buyanova, I A ^a   Bergman, J P ^a   Monemar, B ^a   Amano, H ^b   Akasaki, I ^b   Wysmolek, A ^c   Lomiak, P ^c   Baranowski, J M ^c   Pakula, K ^c   Stepniewski, R ^c   Korona, K P ^c   Grzegory, I ^d   Bockowski, M ^d   Porowski, S ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

^c UNIVERSITY OF WARSAW   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A. semiconductors; A. thin films; D. optical properties; E. luminescence

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRON EMISSION; ENERGY GAP; EXCITONS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

FREE EXCITON; GALLIUM NITRIDE; IMPURITY SCATTERING; POLARITON;

ELECTRON SCATTERING;

EID: 0031994021     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10184-3     Document Type: Article

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